M25PVMN6TP TR Micron Technology Inc. | M25PVMN6TPCT-ND Digi- Key Part Number, M25PVMN6TPCT-ND HTML Datasheet, M25P M25PVMN6P STMicroelectronics NOR Flash 16MBIT SFLASH MEM datasheet, inventory & pricing. Part, M25P Category. Description, 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHZ Spi Bus Interface. Company, ST Microelectronics, Inc. Datasheet.
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Generally, this capacitor is of the order of nF.
Memory organization 17 Table 4. These parameters are characterized only. Details of how to find the Technology Process in the marking are given in AN1see also Section Chip Select S can be driven High after any bit of the data-out sequence is being shifted out. Each page is bytes wide. The device is first selected by driving Chip Select S Low.
Every instruction sequence starts with a one-byte instruction code. If the 8 least significant address bits A7-A0 are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page from the address whose 8 least significant m25p1 A7-A0 are all zero. Bus master and memory devices on the SPI bus 10 Figure 5. Chip Select S must be driven Low for the entire duration of the sequence.
Power-up timing 36 Figure Data retention and endurance and Table Document revision history Date Revision Changes -i c ion onno U. The whole memory can be erased eatasheet the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.
LP D AI 1. Information in this document supersedes and replaces all information previously supplied. Only one device is selected at a time, so daasheet one device drives the Serial Data Output Q line at a time, the other devices are high impedance.
Then, the old-style 8-bit Electronic Signature, stored in the memory, is shifted out on Serial Data Output Qeach bit being shifted out during the falling datasheey of Serial Clock C. It can also be used as a software protection mechanism, while the device is not in active use, as in this mode, the device ignores all Write, Program and Erase instructions.
The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the Datashest Conditions summarized in the relevant tables. Grade 3 is available only in devices delivered in S08N packages.
Chip Select S must be driven High after the eighth bit of the last address byte has been latched in, datazheet the Sector Erase SE instruction is not executed.
Normal precautions must be taken for supply rail decoupling, to stabilize the V cc supply. Signal names 6 Table 2. Output timing 46 Figure Each device in a system should have the V cc rail decoupled by a suitable capacitor close to the package pins. Ordering information scheme Ratasheet Then the memory contents, at that address, is shifted out on Serial Data Output Qeach bit being shifted out, at a maximum frequency f cduring the falling edge of Serial Clock C.
Attempts to write to the Status Register dataxheet rejected, and are not accepted for execution. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input Deach dataxheet being latched on the rising edges of Serial Clock C. Unit Page Program cycle time Bytes 0. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any m251p6 property contained therein.
That is, Chip Select S must driven High when the number of datashret pulses after Chip Select S being driven Low datasehet an exact multiple of All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected. Ordering information scheme 52 Table The designer needs to be aware that if a Power-down occurs while a Write, Program or Erase cycle is in progress, some data corruption can result.
The value of the 8-bit Electronic Signature, for the M25P1 6, is 1 4h.
When using the Page Program PP instruction to program consecutive Bytes, optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If Chip Select S goes High while the device is in the Hold condition, this has the effect of resetting the internal logic of the device. Grade 3 temperature range added. Bus master and memory devices on the SPI m2p516 modified, note 2 removed and replaced by an explanatory paragraph.
Data is shifted out on the falling edge of Serial Clock C.
Hold timing 45 Figure The memory is organized as 32 m25pp16, each containing pages. Logic diagram 6 Figure 2. Deep Power-down DP instruction sequence 32 Figure AC characteristics Grade 6 40 Table 1 6. Drawing is not to scale. It receives instructions, addresses, and the data to be programmed. ICC2 max value changed to 10uA Dec 0.
AC characteristics 25 MHz operation, Grade 3 added. D2 Max should not exceed D – K-2 x L. AC measurement conditions 38 Table Output Hi-Z is defined as the point where data out is no longer driven.