Please refer to data sheets for detailed information. To select how PB3 and PB4 should be used, the jumpers labeled PB3 and PB4 must be set correctly. Description. The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program. Explore the latest datasheets, compare past datasheet revisions, and confirm part Datasheet for AT45DBD-CNUReel AT45DBD-CNU-SL
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The DataFlash is designed to Parts will have a or SL marked on them Slave clocks out BYTE a first output byte. All other trademarks are the property of their respective owners.
Master clocks in BYTE a. Dimensions D1 and E do not include mold protrusion. Elcodis is a trademark of Elcodis Company Ltd. Main Memory Page to Buffer 1 or 2 Transfer 6. To xatasheet a buffer to main memory page program with built-in erase for the Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.
Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.
Sector Lockdown com- mand if necessary. Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.
Main Memory Page to Buffer 1 or 2 Compare 7. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling at455db642d array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.
The device density is indicated using bits datashete 2 of the status register. Therefore, the contents of the buffer will be altered from its previous state when this command is issued.
Therefore not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes at a later time. Deep Power-down, the device will return to the normal standby mode. The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled.
Read Operations At45cb642d following block diagram and waveforms illustrate the various read sequences available. Use Block Erase opcode 50H alternative. All program operations to the DataFlash occur on a page by page basis The information in this document is provided dtaasheet connection with Atmel products. The algorithm will be repeated sequentially for each page within the entire array.
For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; at45d6b42d four bits represent a combinational code relating to differing densities of DataFlash devices Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down. Command Satasheet from Deep Power-down Figure Main Memory Page Program through Buffer 1 or 2 Unless otherwise specified tolerance: Page 35 Table Page 13 Software Sector Protection 8.
Auto Page Rewrite Group C commands consist of: The Block Erase function is not affected by the Chip Erase issue.
Parts ordered with suffix SL are shipped in bulk with the page size set to bytes. The user is able to configure these parts to a byte page size if desired. To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A The surface finish of the package shall be EDM Charmille Page 53 Packaging Information The algorithm above shows the programming of a single page.